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UPD444016LE-8 PDF预览

UPD444016LE-8

更新时间: 2024-10-13 22:20:51
品牌 Logo 应用领域
日电电子 - NEC 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 102K
描述
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

UPD444016LE-8 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD444016  
4M-BIT CMOS FAST SRAM  
256K-WORD BY 16-BIT  
Description  
The µPD444016 is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.  
Operating supply voltage is 5.0 V ± 0.5 V.  
The µPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).  
Features  
262,144 words by 16 bits organization  
Fast access time : 8, 10, 12 ns (MAX.)  
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)  
Output Enable input for easy application  
Single +5.0 V power supply  
Ordering Information  
Part number  
Package  
Access time  
Supply current mA (MAX.)  
ns (MAX.)  
At operating  
At standby  
10  
µPD444016LE-8  
44-pin plastic SOJ  
(10.16 mm (400))  
8
220  
200  
190  
220  
200  
190  
µPD444016LE-10  
10  
12  
8
µPD444016LE-12  
µPD444016G5-8-7JF  
µPD444016G5-10-7JF  
µPD444016G5-12-7JF  
44-pin plastic TSOP (II)  
(10.16 mm (400))  
(Normal bent)  
10  
12  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14430EJ4V0DS00 (4th edition)  
Date Published January 2001 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999  
©

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UPD444016LG5-A12Y-7JF-A NEC

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Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, 10.16 MM, LEAD FREE, PLASTIC, TSOP2-44
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4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT