UPD44321361GF-A75

更新时间： 2024-10-13 22:09:47

品牌	Logo	应用领域
日电电子 - NEC		静态存储器
页数	文件大小	规格书
24页	293K
描述
32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION

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中文翻译

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数据手册

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UPD44321361GF-A75 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD44321181, 44321361

32M-BIT ZEROSB^TMSRAM

FLOW THROUGH OPERATION

Description

The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB

static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD44321181 and µPD44321361 are optimized to eliminate dead cycles for read to write, or write to read

transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and

output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input

(CLK).

The µPD44321181 and µPD44321361 are suitable for applications which require synchronous operation, high

speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State

(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes

normal operation.

The µPD44321181 and µPD44321361 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness

for high density and low capacitive loading.

Features

• Low voltage core supply: VDD = 3.3 ± 0.165 V / 2.5 ± 0.125 V

• Synchronous operation

• 100 percent bus utilization

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for flow through operation

• All registers triggered off positive clock edge

• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 7.5 ns (117 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4 (µPD44321361)

/BW1 and /BW2 (µPD44321181)

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with NEC Electronics sales

representative for availability and additional information.

The mark

shows major revised points.

Document No. M15958EJ5V0DS00 (5th edition)

Date Published April 2005 NS CP(K)

Printed in Japan

2002, 2005

12 3 4 5 6 7...24

中文翻译

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与UPD44321361GF-A75相关器件

型号	品牌	获取价格	描述	数据表
UPD44321361GF-A75-A	NEC	获取价格	ZBT SRAM, 1MX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, PLASTIC, LQFP-100
UPD44321361GF-A75Y	RENESAS	获取价格	ZBT SRAM, 1MX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-A75Y-A	NEC	获取价格	暂无描述
UPD44321361GF-A75Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-A85Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C75Y	RENESAS	获取价格	1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C75Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85	RENESAS	获取价格	ZBT SRAM, 1MX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

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