Datasheet > UPD44321361GF-A75Y-A

UPD44321361GF-A75Y-A

更新时间： 2024-10-14 20:32:39

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
24页	275K
描述
1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPD44321361GF-A75Y-A 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991
HTS代码：	8542.32.00.41	风险等级：	5.5
最长访问时间：	7.5 ns	其他特性：	FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e6
长度：	20 mm	内存密度：	37748736 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	36
功能数量：	1	端子数量：	100
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	1MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.7 mm
最大供电电压 (Vsup)：	2.625 V	最小供电电压 (Vsup)：	2.375 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

UPD44321361GF-A75Y-A 数据手册

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第2页

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第3页

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第4页

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第5页

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第6页

浏览型号UPD44321361GF-A75Y-A的Datasheet PDF文件第7页

PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

PD44321181, 44321361

32M-BIT ZEROSB^TMSRAM

FLOW THROUGH OPERATION

Description

The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB

static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

The µPD44321181 and µPD44321361 are optimized to eliminate dead cycles for read to write, or write to read

transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and

output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input

(CLK).

The µPD44321181 and µPD44321361 are suitable for applications which require synchronous operation, high

speed, low voltage, high density and wide bit configuration, such as buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State

(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes

normal operation.

The µPD44321181 and µPD44321361 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness

for high density and low capacitive loading.

Features

• Low voltage core supply: VDD = 3.3 ± 0.165 V / 2.5 ± 0.125 V

• Synchronous operation

• Operating temperature : T^A= 0 to 70 °C (-A75, -A85)

TA = –40 to +85 °C (-A75Y, -A85Y)

• 100 percent bus utilization

• Internally self-timed write control

• Burst read / write : Interleaved burst and linear burst sequence

• Fully registered inputs and outputs for flow through operation

• All registers triggered off positive clock edge

• 3.3V or 2.5V LVTTL Compatible : All inputs and outputs

• Fast clock access time : 7.5 ns (117 MHz), 8.5 ns (100 MHz)

• Asynchronous output enable : /G

• Burst sequence selectable : MODE

• Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

• Separate byte write enable : /BW1 to /BW4 (µPD44321361)

/BW1 and /BW2 (µPD44321181)

• Three chip enables for easy depth expansion

• Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with NEC Electronics sales

representative for availability and additional information.

The mark

shows major revised points.

Document No. M15958EJ4V0DS00 (4th edition)

Date Published November 2003 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7...24

中文翻译

下载PDF

与UPD44321361GF-A75Y-A相关器件

型号	品牌	获取价格	描述	数据表
UPD44321361GF-A85Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C75Y	RENESAS	获取价格	1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C75Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 7.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85	RENESAS	获取价格	ZBT SRAM, 1MX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321361GF-C85Y-A	RENESAS	获取价格	1MX36 ZBT SRAM, 8.5ns, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
UPD44321362F1-A50-FQ2	RENESAS	获取价格	1MX36 ZBT SRAM, 3.2ns, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165
UPD44321362F1-A60-FQ2	RENESAS	获取价格	1MX36 ZBT SRAM, 3.5ns, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165
UPD44321362F1-A60Y-FQ2	RENESAS	获取价格	1MX36 ZBT SRAM, 3.5ns, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165
UPD44321362F1-C50-FQ2	RENESAS	获取价格	1MX36 ZBT SRAM, 3.2ns, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165

与UPD44321361GF-A75Y-A相关文章

意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

9
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

13
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

14
晶圆厂易主：Coherent公司2000万英镑出售苹果供应链关键资产
2024-10-08

36

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44321361GF-A75Y-A

UPD44321361GF-A75Y-A 技术参数

UPD44321361GF-A75Y-A 数据手册

与UPD44321361GF-A75Y-A相关器件

与UPD44321361GF-A75Y-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPD44321361GF-A75Y-A

UPD44321361GF-A75Y-A 技术参数

UPD44321361GF-A75Y-A 数据手册

与UPD44321361GF-A75Y-A相关器件

与UPD44321361GF-A75Y-A相关文章

您还可以找

您在本页遇到什么问题？