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UPD434001ALLE-A17 PDF预览

UPD434001ALLE-A17

更新时间: 2024-11-30 23:40:15
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
16页 133K
描述
x1 SRAM

UPD434001ALLE-A17 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µ
PD434001AL  
4M-BIT CMOS FAST SRAM  
4M-WORD BY 1-BIT  
Description  
The µPD434001AL is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.  
Operating supply voltage is 3.3 V ± 0.3 V.  
The µPD434001AL is packaged in 32-pin plastic SOJ and 32-pin plastic TSOP (II).  
Features  
4,194,304 words by 1 bit organization  
Fast access time : 15, 17, 20 ns (MAX.)  
Output Enable input for easy application  
Single +3.3 V power supply  
Ordering Information  
Part number  
Package  
Access time  
Supply current mA (MAX.)  
At operating At standby  
ns (MAX.)  
µPD434001ALLE-A15  
32-pin plastic SOJ  
(10.16 mm (400))  
15  
17  
20  
15  
17  
20  
130  
5
µPD434001ALLE-A17  
120  
110  
130  
120  
110  
µPD434001ALLE-A20  
µPD434001ALG5-A15-7JD  
µPD434001ALG5-A17-7JD  
µPD434001ALG5-A20-7JD  
32-pin plastic TSOP (II)  
(10.16 mm (400))  
(Normal bent)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M12223EJ5V0DS00 (5th edition)  
Date Published May 2000 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1996  
©

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