Datasheet > UPD434001ALLE-A20

UPD434001ALLE-A20

更新时间： 2024-11-30 23:40:15

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
16页	133K
描述
x1 SRAM

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UPD434001ALLE-A20 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD434001AL

4M-BIT CMOS FAST SRAM

4M-WORD BY 1-BIT

Description

The µPD434001AL is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.

Operating supply voltage is 3.3 V ± 0.3 V.

The µPD434001AL is packaged in 32-pin plastic SOJ and 32-pin plastic TSOP (II).

Features

• 4,194,304 words by 1 bit organization

• Fast access time : 15, 17, 20 ns (MAX.)

• Output Enable input for easy application

• Single +3.3 V power supply

Ordering Information

Part number

Package

Access time

Supply current mA (MAX.)

At operating At standby

ns (MAX.)

µPD434001ALLE-A15

32-pin plastic SOJ

(10.16 mm (400))

130

µPD434001ALLE-A17

120

110

130

120

110

µPD434001ALLE-A20

µPD434001ALG5-A15-7JD

µPD434001ALG5-A17-7JD

µPD434001ALG5-A20-7JD

32-pin plastic TSOP (II)

(10.16 mm (400))

(Normal bent)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M12223EJ5V0DS00 (5th edition)

Date Published May 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1996

12 3 4 5 6 7...16

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