Datasheet > UPD29F032202ALF9-A85TX-BS2

UPD29F032202ALF9-A85TX-BS2

更新时间： 2024-01-23 15:34:06

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
28页	173K
描述
EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|BGA\|63PIN\|PLASTIC

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技术参数
数据手册

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UPD29F032202ALF9-A85TX-BS2 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	11 X 7 MM, FBGA-63	针数：	63
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.84
最长访问时间：	85 ns	备用内存宽度：	8
启动块：	TOP	JESD-30 代码：	R-PBGA-B63
长度：	11 mm	内存密度：	33554432 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	端子数量：	63
字数：	2097152 words	字数代码：	2000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	2MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	1.07 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	类型：	NOR TYPE
宽度：	7 mm	Base Number Matches：	1

UPD29F032202ALF9-A85TX-BS2 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

µPD29F032202AL-X

32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY

4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)

Description

The µPD29F032202AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory

can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the

entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD

mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units.

The µPD29F032202AL-X can be read while its contents are being erased or programmed. The memory cell is

divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other

bank thanks to the simultaneous execution architecture. The banks are 4M bits and 28M bits.

This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the

B type has a boot sector at the lowest address (sector).

Because the µPD29F032202AL-X enables the boot sector to be erased, it is ideal for storing a boot program. In

addition, program code that controls the flash memory can be also stored, and the program code can be

programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,

each of which can be erased in 8K bytes units.

Once a program or erase command sequence has been executed, an automatic program or automatic erase

function internally executes program or erase and verification automatically.

Because the µPD29F032202AL-X can be electrically erased or programmed by writing an instruction, data can be

reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of

applications.

This flash memory is packed in a 48-pin PLASTIC TSOP (I) and 63-pin TAPE FBGA.

Features

• Two bank organization enabling simultaneous execution of program / erase and read

• Bank organization: 2 banks (4M bits + 28M bits)

• Memory organization : 4,194,304 words × 8 bits (BYTE mode)

2,097,152 words × 16 bits (WORD mode)

• Sector organization : 71 sectors (8K bytes / 4K words × 8 sectors, 64K bytes / 32K words × 63 sectors)

• 2 types of sector organization

• T type : Boot sector allocated to the highest address (sector)

• B type : Boot sector allocated to the lowest address (sector)

• 3-state output

• Automatic program

• Program suspend / resume

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14911EJ6V0DS00 (6th edition)

The mark ★ shows major revised points.

Date Published January 2002 NS CP (K)

Printed in Japan

2001

12 3 4 5 6 7...28

中文翻译

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与UPD29F032202ALF9-A85TX-BS2相关器件

型号	品牌	获取价格	描述	数据表
UPD29F032202ALF9-A85TY-BS2	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|BGA\|63PIN\|PLASTIC
UPD29F032202ALF9-B85BX-BS2	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|BGA\|63PIN\|PLASTIC
UPD29F032202ALF9-B85TX-BS2	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|BGA\|63PIN\|PLASTIC
UPD29F032202ALF9-B85TY-BS2	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|BGA\|63PIN\|PLASTIC
UPD29F032202ALGZ-A85BX-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC
UPD29F032202ALGZ-A85TX-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC
UPD29F032202ALGZ-A85TY-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC
UPD29F032202ALGZ-B85BX-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC
UPD29F032202ALGZ-B85TX-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC
UPD29F032202ALGZ-B85TY-MJH	ETC	获取价格	EEPROM\|FLASH\|2MX16/4MX8\|CMOS\|TSSOP\|48PIN\|PLASTIC

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