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UPD29F032202AL-YB85BF9-BS2 PDF预览

UPD29F032202AL-YB85BF9-BS2

更新时间: 2024-01-03 13:42:50
品牌 Logo 应用领域
其他 - ETC 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
2页 182K
描述
EEPROM

UPD29F032202AL-YB85BF9-BS2 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Base Number Matches:1

UPD29F032202AL-YB85BF9-BS2 数据手册

 浏览型号UPD29F032202AL-YB85BF9-BS2的Datasheet PDF文件第2页 
µPD29F032202/03/04AL  
32 Mb Dual-Operation Flash Memory  
Memory  
Description  
The µPD29F032202/03/04AL is a 32 Mb flash memory designed to execute simultaneously  
a program or an erase operation in one bank and a read operation from the other bank,  
making the device suitable for systems that need to store both code and data.  
Features  
Product Name  
µPD29F032202/3/4  
Bit Organization  
Sector Architecture  
Bank Architecture  
Boot Location  
4 Mb x 8 bits / 2 Mwords x 16 bits  
8 KB x 8 sectors + 64 KB x 63 sectors (x8 mode)  
4 Kwords x 8 sectors + 32 Kwords x 63 sectors (x16 mode)  
µPD29F032202:  
µPD29F032203:  
4 Mb + 28 Mb  
8 Mb + 24 Mb  
µPD29F032204AL: 16 Mb + 16 Mb  
Top (-T) or bottom (-B) boot  
VCC = 3.0V 3.6V (-A)  
VCC = 2.7V 3.3V (-B)  
Power Supply  
Random Access Time  
Operating Temperature  
Package  
85 ns  
-25° C to +85° C (-X)  
-40° C to +85° C (-Y)  
48-pin TSOP Type I (12 mm x 20 mm)  
63-ball tape FBGA (11 mm x 7 mm)  
Dual-operation architecture: reduced need for external buffer and system  
overhead; lower costs  
Product Highlights  
Three kinds of bank architecture: 4 Mb/28 Mb, 8 Mb/24 Mb or 16 Mb/16 Mb  

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