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UPD29F032203ALF9-B85TY-BS2

更新时间： 2024-01-29 21:58:37
品牌 Logo 应用领域
其他 - ETC 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 172K
描述
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|63PIN|PLASTIC

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UPD29F032203ALF9-B85TY-BS2 技术参数

生命周期：ObsoleteReach Compliance Code：compliant
风险等级：5.84Is Samacsys：N
最长访问时间：85 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B63内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：8,63端子数量：63
字数：2097152 words字数代码：2000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA63,8X12,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：8K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.045 mA
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM切换位：YES
类型：NOR TYPEBase Number Matches：1

UPD29F032203ALF9-B85TY-BS2 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD29F032203AL-Y  
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY  
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)  
Description  
The µPD29F032203AL-Y is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory  
can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the  
entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD  
mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units.  
The µPD29F032203AL-Y can be read while its contents are being erased or programmed. The memory cell is  
divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other  
bank thanks to the simultaneous execution architecture. The banks are 8M bits and 24M bits.  
This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the  
B type has a boot sector at the lowest address (sector).  
Because the µPD29F032203AL-Y enables the boot sector to be erased, it is ideal for storing a boot program. In  
addition, program code that controls the flash memory can be also stored, and the program code can be  
programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,  
each of which can be erased in 8K bytes units.  
Once a program or erase command sequence has been executed, an automatic program or automatic erase  
function internally executes program or erase and verification automatically.  
Because the µPD29F032203AL-Y can be electrically erased or programmed by writing an instruction, data can be  
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of  
applications.  
This flash memory is packed in a 48-pin PLASTIC TSOP(I) and 63-pin TAPE FBGA.  
Features  
• Two bank organization enabling simultaneous execution of program / erase and read  
• Bank organization: 2 banks (8M bits + 24M bits)  
• Memory organization : 4,194,304 words × 8 bits (BYTE mode)  
2,097,152 words × 16 bits (WORD mode)  
• Sector organization : 71 sectors (8K bytes / 4K words × 8 sectors, 64K bytes / 32K words × 63 sectors)  
• 2 types of sector organization  
• T type : Boot sector allocated to the highest address (sector)  
• B type : Boot sector allocated to the lowest address (sector)  
• 3-state output  
• Automatic program  
• Program suspend / resume  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M15504EJ4V0DS00 (4th edition)  
The mark ★ shows major revised points.  
Date Published January 2002 NS CP (K)  
Printed in Japan  
2001  
©
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与UPD29F032203ALF9-B85TY-BS2相关器件

型号 品牌 获取价格 描述 数据表
UPD29F032203ALGZ-A85BX-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-A85BY-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-A85TX-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-A85TY-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-B85BX-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-B85BY-MJH RENESAS

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 		暂无描述
UPD29F032203ALGZ-B85TX-MJH ETC

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 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032203ALGZ-B85TY-MJH RENESAS

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 		IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
UPD29F032203AL-X ETC

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 		UPD29F032203AL-X Data Sheet | Data Sheet[09/2002]
UPD29F032203AL-XA85BF9-BS2 RENESAS

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 		UPD29F032203AL-XA85BF9-BS2

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