Datasheet > UPD29F032202AL-XA85BGZ

UPD29F032202AL-XA85BGZ

更新时间： 2024-01-02 02:24:03

品牌	Logo	应用领域
瑞萨 - RENESAS		光电二极管
页数	文件大小	规格书
2页	179K
描述
UPD29F032202AL-XA85BGZ

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UPD29F032202AL-XA85BGZ 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
Base Number Matches：	1

UPD29F032202AL-XA85BGZ 数据手册

浏览型号UPD29F032202AL-XA85BGZ的Datasheet PDF文件第2页

µPD29F032202/03/04AL

32 Mb Dual-Operation Flash Memory

Memory

Description

The µPD29F032202/03/04AL is a 32 Mb flash memory designed to execute simultaneously

a program or an erase operation in one bank and a read operation from the other bank,

making the device suitable for systems that need to store both code and data.

Features

Product Name

µPD29F032202/3/4

Bit Organization

Sector Architecture

Bank Architecture

Boot Location

4 Mb x 8 bits / 2 Mwords x 16 bits

8 KB x 8 sectors + 64 KB x 63 sectors (x8 mode)

4 Kwords x 8 sectors + 32 Kwords x 63 sectors (x16 mode)

µPD29F032202:

µPD29F032203:

4 Mb + 28 Mb

8 Mb + 24 Mb

µPD29F032204AL: 16 Mb + 16 Mb

Top (-T) or bottom (-B) boot

V_CC= 3.0V – 3.6V (-A)

V_CC= 2.7V – 3.3V (-B)

Power Supply

Random Access Time

Operating Temperature

Package

85 ns

-25° C to +85° C (-X)

-40° C to +85° C (-Y)

48-pin TSOP Type I (12 mm x 20 mm)

63-ball tape FBGA (11 mm x 7 mm)

•

Dual-operation architecture: reduced need for external buffer and system

overhead; lower costs

Product Highlights

Three kinds of bank architecture: 4 Mb/28 Mb, 8 Mb/24 Mb or 16 Mb/16 Mb

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