5秒后页面跳转
捷配首页

Datasheet > UPD29F032202ALGZ-A85BX-MJH
UPD29F032202ALGZ-A85BX-MJH PDF预览

UPD29F032202ALGZ-A85BX-MJH

更新时间： 2024-01-12 21:15:05
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 173K
描述
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC

阅读下载

中文翻译

获取价格

UPD29F032202ALGZ-A85BX-MJH 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：12 X 20 MM, PLASTIC, TSOP1-48针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.37
最长访问时间：85 ns备用内存宽度：8
启动块：TOPJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：16功能数量：1
端子数量：48字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NOR TYPE
宽度：12 mmBase Number Matches：1

UPD29F032202ALGZ-A85BX-MJH 数据手册

 浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第2页浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第3页浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第4页浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第5页浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第6页浏览型号UPD29F032202ALGZ-A85BX-MJH的Datasheet PDF文件第7页 
DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD29F032202AL-X  
32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY  
4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)  
Description  
The µPD29F032202AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory  
can be erased at a low voltage (2.7 to 3.3 V, 3.0 to 3.6 V) supplied from a single power source, or the contents of the  
entire chip can be erased. Two modes of memory organization, BYTE mode (4,194,304 words × 8 bits) and WORD  
mode (2,097,152 words × 16 bits), are selectable so that the memory can be programmed in byte or word units.  
The µPD29F032202AL-X can be read while its contents are being erased or programmed. The memory cell is  
divided into two banks. While sectors in one bank are being erased or programmed, data can be read from the other  
bank thanks to the simultaneous execution architecture. The banks are 4M bits and 28M bits.  
This flash memory comes in two types. The T type has a boot sector located at the highest address (sector) and the  
B type has a boot sector at the lowest address (sector).  
Because the µPD29F032202AL-X enables the boot sector to be erased, it is ideal for storing a boot program. In  
addition, program code that controls the flash memory can be also stored, and the program code can be  
programmed or erased without the need to load it into RAM. Eight small sectors for storing parameters are provided,  
each of which can be erased in 8K bytes units.  
Once a program or erase command sequence has been executed, an automatic program or automatic erase  
function internally executes program or erase and verification automatically.  
Because the µPD29F032202AL-X can be electrically erased or programmed by writing an instruction, data can be  
reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of  
applications.  
This flash memory is packed in a 48-pin PLASTIC TSOP (I) and 63-pin TAPE FBGA.  
Features  
• Two bank organization enabling simultaneous execution of program / erase and read  
• Bank organization: 2 banks (4M bits + 28M bits)  
• Memory organization : 4,194,304 words × 8 bits (BYTE mode)  
2,097,152 words × 16 bits (WORD mode)  
• Sector organization : 71 sectors (8K bytes / 4K words × 8 sectors, 64K bytes / 32K words × 63 sectors)  
• 2 types of sector organization  
• T type : Boot sector allocated to the highest address (sector)  
• B type : Boot sector allocated to the lowest address (sector)  
• 3-state output  
• Automatic program  
• Program suspend / resume  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. M14911EJ6V0DS00 (6th edition)  
The mark ★ shows major revised points.  
Date Published January 2002 NS CP (K)  
Printed in Japan  
2001  
©
1234567...28

中文翻译

下载PDF

与UPD29F032202ALGZ-A85BX-MJH相关器件

型号 品牌 获取价格 描述 数据表
UPD29F032202ALGZ-A85TX-MJH ETC

获取价格

 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032202ALGZ-A85TY-MJH ETC

获取价格

 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032202ALGZ-B85BX-MJH ETC

获取价格

 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032202ALGZ-B85TX-MJH ETC

获取价格

 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032202ALGZ-B85TY-MJH ETC

获取价格

 		EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
UPD29F032202AL-X NEC

获取价格

 		DUAL OPERATION FLASH MEMORY 32M BITS A SERIES
UPD29F032202AL-XA85BF9-BS2 ETC

获取价格

 		EEPROM
UPD29F032202AL-XA85BGZ RENESAS

获取价格

 		UPD29F032202AL-XA85BGZ
UPD29F032202AL-XA85TF9-BS2 ETC

获取价格

 		EEPROM
UPD29F032202AL-XA85TGZ ETC

获取价格

 		EEPROM

与UPD29F032202ALGZ-A85BX-MJH相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证