DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16818
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By
employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and
power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in power-saving mode.
The µPD16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
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•
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Compatible with 3V-/5V- supply voltage
Pin compatible with µPD16803
Low ON resistance (sum of ON resistors of top and bottom MOS FETs)
RON1= 1.2 Ω (VM = 3.0 V)
RON2 = 1.0 Ω (VM = 5.0 V)
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Low current consumption: IDD = 0.4 mA TYP. (VDD = 2.7 V to 3.6 V)
Stop mode function that turns OFF all output MOS FETs
Drive current can be set in power-saving mode (set by external resistor)
Compact surface mount package
ORDERING INFORMATION
Part Number
Package
µPD16818GS
20-pin plastic SOP (300 mil)
20-pin plastic SSOP (225 mil)
µPD16818GR-8JG
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Condition
Rating
Unit
V
Supply voltage
Motor block
VM
–0.5 to +7.0
–0.5 to +7.0
Control block
VDD
Note 1
Power
µPD16818GS
PD1
1.0
W
Note 2
consumption
PD2
1.25
Note 2
µPD16818GR-8JG
PD2S
ID (pulse)
VIN
0.79
Note 2
Instantaneous H bridge drive current
Input voltage
PW ≤ 5 ms, Duty ≤ 40 %
±1.0
A
–0.5 to VDD + 0.5
0 to 60
V
Operating temperature range
Operation junction temperature
Storage temperature range
TA
°C
°C
°C
TJ (MAX)
Tstg
150
–55 to +150
Notes 1. IC only
2. When mounted on a glass epoxy printed circuit board (100 mm × 100 mm × 1 mm)
The information in this document is subject to change without notice.
Document No. S11365EJ2V0DS00 (2nd edition)
Date Published December 1997 N
Printed in Japan
1997
©