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UPD16835 PDF预览

UPD16835

更新时间: 2024-10-14 12:47:19
品牌 Logo 应用领域
日电电子 - NEC 驱动器
页数 文件大小 规格书
32页 195K
描述
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT

UPD16835 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
µPD16835  
MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT  
The µPD16835 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOS FET output  
circuit. Because it uses MOS FETs in its output stage, this driver IC consumes less power than conventional driver  
ICs that use bipolar transistors.  
Because the µPD16835 controls a motor by inputting serial data, its package has been shrunk and the number  
of pins reduced. As a result, the performance of the application set can be improved and the size of the set has been  
reduced.  
This IC employs a current-controlled 64-step micro step driving method that drives stepper motor with low vibration.  
The µPD16835 is housed in a 38-pin shrink SOP to contribute to the miniaturization of the application set.  
This IC can simultaneously drive two stepper motors and is ideal for the mechanisms of camcorders.  
FEATURES  
Four H bridge circuits employing power MOS FETs  
Current-controlled 64-step micro step driving  
Motor control by serial data (8 bytes × 8 bits) (original oscillation: 4-MHz input)  
Data is input with the LSB first.  
EVR reference setting voltage: 100 to 250 mV (@VREF = 250 mV) ... 4-bit data input (10-mV step)  
Chopping frequency: 32 to 124 kHz ... 5-bit data input (4-kHz step)  
Original oscillation division or internal oscillation selectable  
Number of pulses in 1 VD: 0 to 252 pulses ... 6 bits + 2-bit data input (4 pulses/step)  
Step cycle: 0.25 to 8,191.75 µs ... 15-bit data input (0.25-µs step)  
3-V power supply. Minimum operating voltage: 2.7 V (MIN.)  
Low current consumption IDD: 3 mA (MAX.), IDD (reset): 100 µA (MAX.), IMO: 1 µA (MAX.)  
38-pin shrink SOP (300 mil)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Supply voltage  
Symbol  
VDD  
Condition  
Rating  
-0.5 to +6.0  
-0.5 to +11.2  
-0.5 to VDD + 0.5  
500  
Unit  
V
VM  
V
Input voltage  
VIN  
V
mV  
Reference voltage  
H bridge drive current  
VREF  
IM (DC)  
IM (pulse)  
PT  
Note 1  
DC  
PW 10 ms, Duty 5%  
±150  
mA/phase  
mA/phase  
W
Note 1  
Instantaneous H bridge drive current  
±300  
Note 2  
Power consumption  
1.0  
Peak junction temperature  
Storage temperature  
TCH (MAX)  
Tstg  
150  
°C  
-55 to +150  
°C  
Notes 1. Permissible current per phase with the IC mounted on a PCB.  
2. When the IC is mounted on a glass epoxy PCB (10 cm × 10 cm × 1 mm).  
The information in this document is subject to change without notice.  
Document No. G11594EJ1V0DS00 (1st edition)  
Date Published August 1998 J CP(K)  
Printed in Japan  
1998  
©

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