Datasheet > UPA828TD-T3FB-A

UPA828TD-T3FB-A

更新时间： 2024-01-29 13:34:26

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	59K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD, M16, 1208, 6 PIN

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA828TD-T3FB-A 数据手册

µPA828TD

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

Note

Total Power Dissipation

Ptot

90 in 1 element

180 in 2 elements

150

Junction Temperature

Storage Temperature

°C

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Symbol

ICBO

Test Conditions

VCB = 5 V, IE = 0 mA

MIN.

−

TYP.

−

MAX.

Unit

100

140

−

IEBO

VEB = 1 V, IC = 0 mA

−

Note 1

hFE

VCE = 2 V, IC = 20 mA

7.0

9.0

6.0

7.0

−

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

9.0

11.0

7.5

8.5

1.3

GHz

−

S21e²

−

V^CE= 1 V, IC = 3 mA, f = 2 GHz,

Z^S= Zopt

2.0

V^CE= 2 V, IC = 3 mA, f = 2 GHz,

Z^S= Zopt

Noise Figure (2)

−

1.3

2.0

Note 2

Reverse Transfer Capacitance

hFE Ratio

Cre

VCB = 2 V, IE = 0 mA, f = 1 MHz

V^CE= 2 V, IC = 20 mA,

h^FE1: Smaller value of Q1 and Q2,

hFE2 : Larger value of Q1 and Q2

−

0.4

0.8

0.85

−

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

70 to 140

Data Sheet PU10402EJ02V0DS

123 4 5 6 7

下载PDF

与UPA828TD-T3FB-A相关器件

型号	品牌	描述	获取价格	数据表
UPA828TF	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P	获取价格
UPA828TF_99	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR	获取价格
UPA828TF-KB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MIN	获取价格
UPA828TF-T1	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-P	获取价格
UPA828TF-T1KB	NEC	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, THIN, MIN	获取价格
UPA829TC-FB	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, THIN, ULTR	获取价格