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UPA1900TE

更新时间： 2024-11-18 22:41:43

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	63K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1900TE 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1900

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1900 is a switching device which can be driven

directly by a 2.5 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

The µPA1900 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

0 to 0.1

FEATURES

0.65

• Can be driven by a 2.5 V power source

• Low on-state resistance

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

DS(on)1

DS(on)2

DS(on)3

= 35 mΩ MAX. (V = 4.5 V, I = 3.0 A)

= 38 mΩ MAX. (V = 4.0 V, I = 3.0 A)

, 2, 5, 6 : Drain

= 45 mΩ MAX. (V = 2.5 V, I = 3.0 A)

: Gate

: Source

ORDERING INFORMATION

PART NUMBER

PACKAGE

EQUIVALENT CIRCUIT

µPA1900TE

6-pin Mini Mold (Thin Type)

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Body

Diode

Gate

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

±12

±5.5

±22

0.2

GSS

Gate

Protection

Diode

D(DC)

Source

D(pulse)

Marking: TG

150

°C

stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D13809EJ1V0DS00 (1st edition)

1998, 1999

The mark ★ shows major revised points.

12 3 4 5 6 7 8

中文翻译

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与UPA1900TE相关器件

型号	品牌	获取价格	描述	数据表
UPA1900TE-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5.5A I(D),TSOP
UPA1900TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5.5A I(D),TSOP
UPA1900TE-T1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,5.5A I(D),TSOP
UPA1900TE-T2	RENESAS	获取价格	UPA1900TE-T2
UPA1901	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1901TE	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1901TE	RENESAS	获取价格	6500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1901TE-A	RENESAS	获取价格	6500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1901TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6.5A I(D),TSOP
UPA1901TE-T1	RENESAS	获取价格	UPA1901TE-T1

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