Datasheet > UPA1901TE

UPA1901TE

更新时间： 2024-02-04 03:25:30

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	71K
描述
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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技术参数
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UPA1901TE 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	6.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

UPA1901TE 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1901

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1901 is a switching device, which can be driven

directly by a 2.5 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 39 mΩ MAX. (V^GS= 4.5 V, I^D= 3.5 A)

R^DS(on)2= 40 mΩ MAX. (V^GS= 4.0 V, I^D= 3.5 A)

R^DS(on)3= 54 mΩ MAX. (V^GS= 2.5 V, I^D= 3.5 A)

0.65

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

ORDERING INFORMATION

1, 2, 5, 6 : Drain

: Gate

: Source

PART NUMBER

PACKAGE

µPA1901TE

SC-95 (Mini Mold Thin Type)

EQUIVALENT CIRCUIT

Marking : TQ

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

PT1

±12

±6.5

±26

0.2

Body

Diode

Gate

Protection

Diode

Source

°C

Total Power Dissipation ^Note2

P^T2

2.0

Channel Temperature

Tch

150

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G15804EJ1V0DS00 (1st edition)

Date Published June 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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与UPA1901TE相关器件

型号	品牌	获取价格	描述	数据表
UPA1901TE-A	RENESAS	获取价格	6500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1901TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,6.5A I(D),TSOP
UPA1901TE-T1	RENESAS	获取价格	UPA1901TE-T1
UPA1901TE-T1-A	RENESAS	获取价格	Nch Single Power Mosfet 30V 6.5A 39Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1901TE-T2	RENESAS	获取价格	UPA1901TE-T2
UPA1902	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1902TE	NEC	获取价格	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1902TE	RENESAS	获取价格	7000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 6 PIN
UPA1902TE-T2	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,7A I(D),SC-74
UPA1902TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,7A I(D),SC-74

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