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UPA104G-E1 PDF预览

UPA104G-E1

更新时间: 2024-01-16 16:33:36
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
8页 67K
描述
HIGH FREQUENCY NPN TRANSISTOR ARRAY

UPA104G-E1 数据手册

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DATA SHEET  
COMPOUND TRANSISTOR  
µPA104  
HIGH FREQUENCY NPN TRANSISTOR ARRAY  
FEATURES  
9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY  
OUTSTANDING hFE LINEARITY  
TWO PACKAGE OPTIONS:  
µPA104B: Studded ceramic package provides superior thermal dissipation  
µPA104G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting  
EXCELLENT FOR ANALOG ADDITIONS & FORMATION OF 2-INPUT OR/NOR GATES  
DESCRIPTION AND APPLICATIONS  
The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its  
internal transistor configuration and external connection options allow the user considerable flexibility in its  
application. Its high gain bandwidth product (fT = 9 GHz) make it applicable for electro-optical, signal processing,  
cellular telephone systems, instrumentation, and high speed gigabit logic circuits.  
ORDERING INFORMATION  
PART NUMBER  
µPA104B-E1  
µPA104G-E1  
PACKAGE  
14-pin ceramic package  
14-pin plastic SOP (225 mil)  
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)  
SYMBOLS  
VCBO*  
VCEO*  
VEBO*  
IC*  
PARAMETERS  
UNITS  
RATINGS  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
15  
6
V
2.5  
40  
mA  
PT  
Power Dissipation  
µPA104B  
mW  
mW  
650  
350  
µPA104G  
TJ  
Junction Temperature  
µPA104B  
°C  
°C  
200  
125  
µPA104G  
TSTG  
Storage Temperature  
µPA104B  
°C  
°C  
–55 to +200  
–55 to +125  
µPA104G  
* Absolute maximum ratings for each transistor.  
Caution electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. P10709EJ2V0DS00 (2nd edition)  
Date Published October 1999 N CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
1995, 1999  
©

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