Datasheet > UPA104G

UPA104G

更新时间： 2024-02-29 13:28:23

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	67K
描述
HIGH FREQUENCY NPN TRANSISTOR ARRAY

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中文翻译

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技术参数
数据手册

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UPA104G 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-CDSO-G14
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
最大集电极电流 (IC)：	0.04 A	基于收集器的最大容量：	1.8 pF
集电极-发射极最大电压：	6 V	配置：	COMPLEX
最小直流电流增益 (hFE)：	40	最高频带：	X BAND
JESD-30 代码：	R-CDSO-G14	元件数量：	6
端子数量：	14	最高工作温度：	125 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	9000 MHz	Base Number Matches：	1

UPA104G 数据手册

DATA SHEET

COMPOUND TRANSISTOR

µPA104

HIGH FREQUENCY NPN TRANSISTOR ARRAY

FEATURES

•

9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY

OUTSTANDING h^FELINEARITY

TWO PACKAGE OPTIONS:

µPA104B: Studded ceramic package provides superior thermal dissipation

µPA104G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting

EXCELLENT FOR ANALOG ADDITIONS & FORMATION OF 2-INPUT OR/NOR GATES

•

DESCRIPTION AND APPLICATIONS

The µPA104 is a user-configurable, Si bipolar transistor array for formation of high speed OR/NOR gates. Its

internal transistor configuration and external connection options allow the user considerable flexibility in its

application. Its high gain bandwidth product (f^T= 9 GHz) make it applicable for electro-optical, signal processing,

cellular telephone systems, instrumentation, and high speed gigabit logic circuits.

ORDERING INFORMATION

PART NUMBER

µPA104B-E1

µPA104G-E1

PACKAGE

14-pin ceramic package

14-pin plastic SOP (225 mil)

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

SYMBOLS

VCBO*

VCEO*

VEBO*

IC*

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

2.5

Power Dissipation

µPA104B

650

350

µPA104G

T^J

Junction Temperature

µPA104B

°C

200

125

µPA104G

TSTG

Storage Temperature

µPA104B

°C

–55 to +200

–55 to +125

µPA104G

* Absolute maximum ratings for each transistor.

Caution electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. P10709EJ2V0DS00 (2nd edition)

Date Published October 1999 N CP(K)

Printed in Japan

The mark

shows major revised points.

1995, 1999

12 3 4 5 6 7 8

中文翻译

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与UPA104G相关器件

型号	品牌	获取价格	描述	数据表
UPA104G-E1	NEC	获取价格	HIGH FREQUENCY NPN TRANSISTOR ARRAY
UPA1424H	RENESAS	获取价格	2A, 50V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
UPA1424H	NEC	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 1
UPA1426H	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| DARLINGTON \| 80V V(BR)CEO \| 2A I(C) \| SIP
UPA1427H	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| DARLINGTON \| 80V V(BR)CEO \| 2A I(C) \| SIP
UPA1428	NEC	获取价格	NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRI
UPA1428A	NEC	获取价格	NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRI
UPA1428AH	NEC	获取价格	NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRI
UPA1428AH-AZ	NEC	获取价格	Power Bipolar Transistor, 2A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 1
UPA1428H	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| DARLINGTON \| 60V V(BR)CEO \| 2A I(C) \| SIP

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