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UP9971G-S08-R PDF预览

UP9971G-S08-R

更新时间: 2024-01-24 11:33:44
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 206K
描述
5A, 60V N-CHANNEL POWER MOSFET

UP9971G-S08-R 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.67配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):5 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UP9971G-S08-R 数据手册

 浏览型号UP9971G-S08-R的Datasheet PDF文件第2页浏览型号UP9971G-S08-R的Datasheet PDF文件第3页浏览型号UP9971G-S08-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UP9971  
Power MOSFET  
5A, 60V N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
DIP-8  
The UTC UP9971 uses UTC’s advanced technology to  
provide excellent RDS(ON), low gate charge and operation with low  
gate voltages. This device is suitable for being used as a load  
switch or in PWM applications.  
„
FEATURES  
* RDS(ON)<60 m@VGS=10V  
SOP-8  
* RDS(ON)<72 m@VGS=4.5V  
* Ultra low gate charge ( typical 32.5 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 109 pF )  
* Fast switching capability  
* Avalanche energy Specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
(5) (6)  
(7) (8)  
2.Drain  
1.Drain  
(2)  
1.Gate  
(4)  
2.Gate  
(3)  
(1)  
2.Source  
1.Source  
„ ORDERING INFORMATION  
Ordering Number  
Package  
Packing  
Lead Free  
Halogen Free  
UP9971G-D08-T  
UP9971G-S08-R  
UP9971G-S08-T  
UP9971L-D08-T  
UP9971L-S08-R  
UP9971L-S08-T  
DIP-8  
SOP-8  
SOP-8  
Tube  
Tape Reel  
Tube  
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R502-294.C  

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