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UP9971-S08-R PDF预览

UP9971-S08-R

更新时间: 2023-01-02 19:56:27
品牌 Logo 应用领域
友顺 - UTC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
4页 210K
描述
Power Field-Effect Transistor, 5A I(D), 60V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

UP9971-S08-R 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):5 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UP9971-S08-R 数据手册

 浏览型号UP9971-S08-R的Datasheet PDF文件第2页浏览型号UP9971-S08-R的Datasheet PDF文件第3页浏览型号UP9971-S08-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
UP9971  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
„
DESCRIPTION  
DIP-8  
The UTC UP9971 uses UTC’s advanced technology to  
provide excellent RDS(ON), low gate charge and operation with low  
gate voltages. This device is suitable for being used as a load  
switch or in PWM applications.  
„
FEATURES  
* RDS(ON)<50 m@VGS=10V  
SOP-8  
* RDS(ON)<60 m@VGS=4.5V  
* Ultra low gate charge ( typical 32.5 nC )  
* Low reverse transfer Capacitance ( CRSS = typical 109 pF )  
* Fast switching capability  
* Avalanche energy Specified  
Lead-free:  
UP9971L  
* Improved dv/dt capability, high ruggedness  
Halogen-free: UP9971G  
„
SYMBOL  
(7) (8)  
D1  
(5) (6)  
D2  
(4)  
G2  
(2)  
G1  
S2  
(3)  
S1  
(1)  
„ ORDERING INFORMATION  
Ordering Number  
Package  
Packing  
Normal  
Lead Free  
Halogen Free  
UP9971-D08-R  
UP9971-S08-R  
UP9971L-D08-R  
UP9971L-S08-R  
UP9971G-D08-R  
UP9971G-S08-R  
DIP-8  
Tube  
SOP-8  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2009 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R502-294.A  

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