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UP9T15G-TN3-R PDF预览

UP9T15G-TN3-R

更新时间: 2024-01-30 23:54:25
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
5页 312K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

UP9T15G-TN3-R 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):12.5 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):60 A
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UP9T15G-TN3-R 数据手册

 浏览型号UP9T15G-TN3-R的Datasheet PDF文件第2页浏览型号UP9T15G-TN3-R的Datasheet PDF文件第3页浏览型号UP9T15G-TN3-R的Datasheet PDF文件第4页浏览型号UP9T15G-TN3-R的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
UP9T15G  
Power MOSFET  
N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
„
DESCRIPTION  
The UP9T15GL uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in  
PWM applications.  
„
FEATURES  
* VDS(V)=20V  
* ID=12 .5A (VGS=4.5V)  
* RDS(ON)<50m@ VGS =4.5 V, ID =6 A  
* RDS(ON)<80m@ VGS =2.5 V, ID =5.2 A  
*Pb-free plating product number: UP9T15GL  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
2
D
D
3
S
S
UP9T15G-TN3-R  
UP9T15G-TN3-T  
UP9T15GL-TN3-R  
UP9T15GL-TN3-T  
TO-252  
TO-252  
G
G
Tape Reel  
Tube  
www.unisonic.com.tw  
Copyright © 2008 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R502-208.A  

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