Datasheet > UP9T15GP-TN3-R

UP9T15GP-TN3-R

更新时间： 2024-02-11 12:52:32

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	348K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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UP9T15GP-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UP9T15G

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET



DESCRIPTION

The UP9T15G uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.



FEATURES

* V_DS(V)=20V

* I_D=12 .5A (V_GS=4.5V)

* R_DS(ON)< 50mΩ @ V_GS=4.5 V, I_D=6 A

* R_DS(ON)< 80mΩ @ V_GS=2.5 V, I_D=5.2 A



SYMBOL

2.Drain

1.Gate

3.Source

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-252

Packing

Lead Free

Halogen Free

UP9T15GP-TN3-R

D: Drain S: Source

UP9T15GL-TN3-R

Tape Reel

Note: Pin Assignment: G: Gate



MARKING

www.unisonic.com.tw

1 of 5

QW-R502-208.B

12 3 4 5

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