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UP03390

更新时间: 2024-11-12 21:55:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
5页 123K
描述
Silicon NPN epitaxial planar type

UP03390 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F5
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

UP03390 数据手册

 浏览型号UP03390的Datasheet PDF文件第2页浏览型号UP03390的Datasheet PDF文件第3页浏览型号UP03390的Datasheet PDF文件第4页浏览型号UP03390的Datasheet PDF文件第5页 
Composite Transistors  
UP03390  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
(0.30)  
0.20 +00..0025  
0.10 0.02  
5
4
3
Features  
Two elements incorporated into one package  
(Transistors with built-in resistor)  
1
2
(0.50)(0.50)  
1.00 0.05  
1.60 0.05  
Reduction of the mounting area and assembly cost by one half  
Display at No.1 lead  
Basic Part Number  
UNR1114 + UNR1213  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Emitter (Tr2)  
4: Collector (Tr2)  
5: Collector (Tr1)  
Base (Tr2)  
Tr1  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
SSMini5-F2 Package  
Marking Symbol: EX  
Internal Connection  
Collector current  
IC  
100  
mA  
V
Collector-base voltage  
(Emitter open)  
VCBO  
50  
(C1,B2)  
5
(C2)  
4
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
R1  
Collector current  
IC  
PT  
Tj  
100  
125  
mA  
mW  
°C  
10 kΩ  
Tr1  
Tr2  
Overall Total power dissipation  
Junction temperature  
R2  
47 kΩ  
R2  
47 kΩ  
125  
R1  
47 kΩ  
1
2
3
Storage temperature  
Tstg  
55 to +125  
°C  
(E1) (B1) (E2)  
Publication date: August 2004  
SJJ00293AED  
1

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