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UP03396

更新时间: 2024-09-25 03:23:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 127K
描述
Silicon NPN, PNP epitaxial planar type (Tr1,2)

UP03396 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):35
JESD-30 代码:R-PDSO-F5JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:5封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UP03396 数据手册

 浏览型号UP03396的Datasheet PDF文件第2页浏览型号UP03396的Datasheet PDF文件第3页浏览型号UP03396的Datasheet PDF文件第4页浏览型号UP03396的Datasheet PDF文件第5页 
Composite Transistors  
UP03396  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
(0.30)  
0.20 +00..0025  
0.10 0.02  
5
4
3
Features  
Two elements incorporated into one package  
(Transistors with built-in resistor)  
1
2
(0.50)(0.50)  
1.00 0.05  
1.60 0.05  
Reduction of the mounting area and assembly cost by one half  
Display at No.1 lead  
Basic Part Number  
UNR111T + UNR1211  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Emitter (Tr2)  
4: Collector (Tr2)  
5: Collector (Tr1)  
Base (Tr2)  
Tr1  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
SSMini5-F2 Package  
Marking Symbol: 6P  
Internal Connection  
Collector current  
IC  
100  
mA  
V
Collector-base voltage  
(Emitter open)  
VCBO  
50  
(C1,B2)  
5
(C2)  
4
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
R1  
Collector current  
IC  
PT  
Tj  
100  
125  
mA  
mW  
°C  
22 kΩ  
Tr1  
Tr2  
Overall Total power dissipation  
Junction temperature  
R2  
10 kΩ  
R2  
47 kΩ  
125  
R1  
10 kΩ  
1
2
3
Storage temperature  
Tstg  
55 to +125  
°C  
(E1) (B1) (E2)  
Publication date: August 2004  
SJJ00295AED  
1

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