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UP01211G

更新时间： 2024-02-13 17:36:58
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 449K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI5-F3, 5 PIN

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UP01211G 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.82
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JESD-30 代码：R-PDSO-F5元件数量：2
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

UP01211G 数据手册

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This product complies with the RoHS Directive (EU 2002/95/EC).  
Composite Transistors  
UP01211G  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
Package  
Two elements incorporated into one package (transistors with built-in resistor)  
Reduction of the mounting area and assembly cost by one half.  
ꢀCode  
SSMini5-F3  
ꢀPin Name  
1: Base (Tr1)  
2: mitter  
Basic Part Number  
UNR2211 × 2  
4: Collector (Tr2)  
5: Collector (Tr1)  
(Tr2)  
Absolute Maximum Ratings Ta = 25°C  
Marking Symbol: 9T  
Internal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCO  
IC  
Rating  
Unit  
V
V
(C1)  
5
(C2)  
4
100  
mA  
mW  
°C  
Total power dissipation  
PT  
125  
Tr1  
R2  
Tr2  
R2  
10 kΩ  
10 kΩ  
Junction temperature  
T
125  
R1  
10 kΩ  
R1  
10 kΩ  
Storage temperature  
T
stg  
–55 to 125  
°C  
1
2
3
(B1)  
(E)  
(B2)  
Electrical haracteristcs Ta = 2°C±3°C  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-base voltopen)  
Collector-emitter voltaase open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = 10 mA, IE = 0  
50  
50  
VCEO IC = 2 mA, I= 0  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.5  
mA  
mA  
mA  
VCE = 10 V, IC = 5 mA  
35  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kW  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kW  
0.2  
+30%  
1.2  
V
Input resistance  
10  
1.0  
150  
kW  
-30%  
Resistance ratio  
R1 / R2  
fT  
0.8  
Transition frequency  
VCB = 10 V, IE = –2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: November 2008  
SJJ00416AED  
1
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