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UP0121MG

更新时间： 2024-01-05 14:50:01
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 481K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI5-F3, 5 PIN

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UP0121MG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.8其他特性：BUILT IN BIAS RESISTANCE RATIO IS 21.28
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F5JESD-609代码：e6
湿度敏感等级：1元件数量：2
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

UP0121MG 数据手册

 浏览型号UP0121MG的Datasheet PDF文件第2页浏览型号UP0121MG的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Composite Transistors  
UP0121M  
Silicon NPN epitaxial planar type  
For switching circuits  
For digital circuits  
Unit: mm  
(0.30)  
0.20 –+00..0025  
0.10±0.02  
5
4
3
Features  
Two elements incorporated into one package  
(Emitter-coupled transistors with built-in resistor)  
1
2
(0.50)(0.50)  
SSMini type package, reduction of the mounting area and assembly cost  
1.00±0.05  
1.60±0.05  
Basic Part Number  
No.1 lead  
UNR221M  
2
5
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
R
50  
Unit  
V
VCO  
CEO  
IC  
1: Base (Tr1)  
2: Emitter  
4: Collector (Tr2)  
5: Collector (Tr1)  
SSMini5-F2 Package  
50  
V
3: Base (Tr2)  
10
mA  
mW  
°
C  
Total power dissipation  
PT  
125  
Marking Symbol: EM  
Internal Connection  
Junction temperature  
Tj  
125  
Storage temperature  
T
55 t+125  
°
C  
(C1)  
5
(C2)  
4
Tr1  
R2  
Tr2  
R
R1  
47 kΩ 47 kΩ  
R1  
2.2 kΩ 2.2 kΩ  
1
2
3
(B1) (E) (B2)  
Electrical Cs
T
a
=
25
°
C
±
3
°
C  
Para
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO I
C
= 10 µA, I
E
= 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, I
E
= 0  
VCE = 50 V, IB = 0  
VEB = 6 V, I
C
= 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
VCE = 10 V, I
C
= 5 mA  
80  
4.9  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, R
L
= 1 kΩ  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, R
L
= 1 kΩ  
0.2  
V
Input resistance  
2.2  
0.047  
150  
kΩ  
−
30%  
+30%  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = —2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: June 2005  
SJJ00330AED  
1
123

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