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UNR5214R PDF预览

UNR5214R

更新时间: 2024-02-19 11:37:26
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
17页 438K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SMINI3-G1, SC-70, 3 PIN

UNR5214R 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNR5214R 数据手册

 浏览型号UNR5214R的Datasheet PDF文件第2页浏览型号UNR5214R的Datasheet PDF文件第3页浏览型号UNR5214R的Datasheet PDF文件第4页浏览型号UNR5214R的Datasheet PDF文件第5页浏览型号UNR5214R的Datasheet PDF文件第6页浏览型号UNR5214R的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR521x Series (UN521x Series)  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.10  
–0.05  
+0.1  
For digital circuits  
0.15  
0.3  
–0.0  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts  
1
2
S-Mini type package, allowing automatic insertion through the tape  
packing and magazine packing  
(0.65) (0.65)  
1.3 0.1  
2.0 0.2  
Resistance by Part Number  
10˚  
Marking symbol (R1)  
(R2)  
UNR5210 (UN5210)  
UNR5211 (UN5211)  
UNR5212 (UN5212)  
UNR5213 (UN5213)  
UNR5214 (UN5214)  
UNR5215 (UN5215)  
UNR5216 (UN5216)  
UNR5217 (UN5117)  
UNR5218 (UN5218)  
UNR5219 (UN5219)  
UNR521D (UN521D)  
UNR521E (UN521E)  
UNR521F (UN521F)  
UNR521K (UN521K)  
UNR521L (UN521L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-70  
SMini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR521M (UN521M) EL  
UNR521N (UN521N)  
UNR521T (UN521T)  
UNR521V (UN521V)  
UNR521Z (UN521Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
Tj  
100  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00024CED  
1

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