Datasheet > UNR511HG0L

UNR511HG0L

更新时间： 2025-09-22 19:15:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
18页	630K
描述
元器件封装:S迷你型3-F2;

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中文翻译

获取价格

数据手册

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UNR511HG0L 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors with built-in Resistor

UNR511xG Series

Silicon PNP epitaxial planar type

For digital circuits

■ Features

■ Package

•

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• S-Mini type package, allowing automatic insertion through the tape/

magazine packing

Code

SMini3-F2

Pin Name

1: Base

•

2: Emitter

3: Collector

■ Resistance by Part Number

Marking symbol (R₁)

(R₂)



■ Internal Connection

•

UNR5110G

UNR5111G

UNR5112G

UNR5113G

UNR5114G

UNR5115G

UNR5116G

UNR5117G

UNR5118G

UNR5119G

UNR511DG

UNR511EG

UNR511FG

UNR511HG

UNR511LG

UNR511MG

UNR511NG

UNR511TG

UNR511VG

UNR511ZG

47 kΩ

10 kΩ

22 kΩ

47 kΩ

10 kΩ

4.7 kΩ

22 kΩ

0.51 kΩ

1 kΩ

47 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

2.2 kΩ

4.7 kΩ

22 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

22 kΩ

47 kΩ



R₁

R₂



5.1 kΩ

10 kΩ

22 kΩ

10 kΩ

4.7 kΩ

47 kΩ

2.2 kΩ

22 kΩ

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

Collector current

I_C

P_T

−100

°C

150

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

Publication date: July 2007

SJH00196AED

12 3 4 5 6 7...18

中文翻译

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