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UN1214

更新时间: 2024-11-08 22:41:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关
页数 文件大小 规格书
13页 180K
描述
Silicon NPN epitaxial planer transistor

UN1214 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

UN1214 数据手册

 浏览型号UN1214的Datasheet PDF文件第2页浏览型号UN1214的Datasheet PDF文件第3页浏览型号UN1214的Datasheet PDF文件第4页浏览型号UN1214的Datasheet PDF文件第5页浏览型号UN1214的Datasheet PDF文件第6页浏览型号UN1214的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/  
121D/121E/121F/121K/121L  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For digital circuits  
6.9±0.1  
2.5±0.1  
1.5  
1.5 R0.9  
1.0  
R0.9  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
R0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
0.85  
0.55±0.1  
0.45±0.05  
Resistance by Part Number  
3
2
1
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
UN1211  
UN1212  
UN1213  
UN1214  
UN1215  
UN1216  
UN1217  
UN1218  
UN1219  
UN1210  
UN121D  
UN121E  
UN121F  
UN121K  
UN121L  
2.5  
2.5  
1:Base  
2:Collector  
3:Emitter  
M Type Mold Package  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
Internal Connection  
C
R1  
B
R2  
E
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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