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UN1217R PDF预览

UN1217R

更新时间: 2024-09-17 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 227K
描述
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71

UN1217R 数据手册

 浏览型号UN1217R的Datasheet PDF文件第2页浏览型号UN1217R的Datasheet PDF文件第3页浏览型号UN1217R的Datasheet PDF文件第4页浏览型号UN1217R的Datasheet PDF文件第5页浏览型号UN1217R的Datasheet PDF文件第6页浏览型号UN1217R的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/  
121D/121E/121F/121K/121L  
(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/  
Unit: mm  
121D/121E/121F/121K/121L)  
Silicon NPN epitaxial planer transistor  
6.9 0.1  
2.5 0.1  
1.5  
1.5 R0.9  
1.0  
R0.9  
For digital circuits  
R0.7  
0.85  
Features  
I
G
0.55 0.1  
0.45 0.05  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
G
M type package allowing easy automatic and manual insertion as  
3
2
1
well as stand-alone fixing to the printed circuit board.  
2.5  
2.5  
1:Base  
2:Collector  
3:Emitter  
Resistance by Part Number  
I
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
10kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
M Type Mold Package  
G
G
G
G
G
G
G
G
G
G
G
G
G
G
G
UNR1211  
UNR1212  
UNR1213  
UNR1214  
UNR1215  
UNR1216  
UNR1217  
UNR1218  
UNR1219  
UNR1210  
UNR121D  
UNR121E  
UNR121F  
UNR121K  
UNR121L  
Internal Connection  
C
R1  
B
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
4.7kΩ  
4.7kΩ  
R2  
E
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
50  
50  
V
100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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