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UN1121/1122/1123/1124/112X/112Y PDF预览

UN1121/1122/1123/1124/112X/112Y

更新时间: 2024-09-17 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
7页 109K
描述
UN1121/1122/1123/1124/112X/112Y - PNP Transistor with built-in Resistor

UN1121/1122/1123/1124/112X/112Y 数据手册

 浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第2页浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第3页浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第4页浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第5页浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第6页浏览型号UN1121/1122/1123/1124/112X/112Y的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UNR1121/1122/1123/1124/112X/112Y  
(UN1121/1122/1123/1124/112X/112Y)  
Silicon PNP epitaxial planer transistor  
Unit: mm  
6.9±0.1  
2.5±0.1  
For digital circuits  
1.5  
1.5 R0.9  
1.0  
R0.9  
Features  
Costs can be reduced through downsizing of the equipment and  
R0.7  
reduction of the number of parts.  
M type package allowing easy automatic and manual insertion as  
0.85  
well as stand-alone fixing to the printed circuit board.  
0.55±0.1  
0.45±0.05  
Resistance by Part Number  
3
2
1
(R1)  
2.2k  
4.7kΩ  
10kΩ  
(R2)  
2.2kΩ  
4.7kΩ  
10kΩ  
10kΩ  
5kΩ  
UNR1121  
UNR1122  
UNR1123  
UNR1124  
UNR112X  
UNR112Y  
2.5  
2.5  
1:Base  
2:Collector  
3:Emitter  
2.2kΩ  
0.27kΩ  
3.1kΩ  
M Type Mold Package  
4.6kΩ  
Internal Connection  
Absolute Maximum Ratings (Ta=25˚C)  
C
E
R1  
B
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
R2  
–50  
V
–500  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
600  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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