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UN1117R PDF预览

UN1117R

更新时间: 2024-10-14 20:19:59
品牌 Logo 应用领域
松下 - PANASONIC 开关晶体管
页数 文件大小 规格书
13页 178K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN

UN1117R 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):210
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

UN1117R 数据手册

 浏览型号UN1117R的Datasheet PDF文件第2页浏览型号UN1117R的Datasheet PDF文件第3页浏览型号UN1117R的Datasheet PDF文件第4页浏览型号UN1117R的Datasheet PDF文件第5页浏览型号UN1117R的Datasheet PDF文件第6页浏览型号UN1117R的Datasheet PDF文件第7页 
Transistors with built-in Resistor  
UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/  
111D/111E/111F/111H/111L  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For digital circuits  
6.9±0.1  
2.5±0.1  
1.5  
1.5 R0.9  
1.0  
R0.9  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
R0.7  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
0.85  
0.55±0.1  
0.45±0.05  
Resistance by Part Number  
3
2
1
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
UN1111  
UN1112  
UN1113  
UN1114  
UN1115  
UN1116  
UN1117  
UN1118  
UN1119  
UN1110  
UN111D  
UN111E  
UN111F  
UN111H  
UN111L  
2.5  
2.5  
1:Base  
2:Collector  
3:Emitter  
M Type Mold Package  
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
Internal Connection  
C
E
R1  
B
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
1

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