Datasheet > UMZ1N

UMZ1N

更新时间： 2024-11-06 08:24:03

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
5页	482K
描述
Dual Transistors

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中文翻译

获取价格

数据手册

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UMZ1N 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

UMZ1N

Micro Commercial Components

Features

xꢀ 2SA1037AK and 2SC2412K are housed independently in a package.

xꢀ Mounting cost and area can be cut in half.

xꢀ Transistor elements independent, eliminating interference.

Dual Transistors

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-363

Mechanical Data

xꢀ Case: SOT-363, Molded Plastic

xꢀ Polarity: See Diagram

ꢀ

MARKING:Z1

TR1 MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.15

150

DIMENSIONS

INCHES

P_C

℃

DIM

MIN

.006

.045

.085

MAX

.014

.053

.096

MIN

0.15

1.15

2.15

MAX

0.35

1.35

2.45

NOTE

T_J

T_stg

Storage Temperature

-55-150

.026

0.65Nominal

.047

.071

---

.055

.087

.004

.043

.018

.006

1.20

1.80

---

1.40

2.20

0.10

1.10

0.46

0.15

TR2 MAXIMUM RATINGS T_A=25℃ unless otherwise noted

.035

.010

.003

0.90

0.26

0.08

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-60

Units

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.15

0.15

150

P_C

℃

T_J

T_stg

Storage Temperature

-55-150

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Revision: A

2011/01/01

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