生命周期: | Active | 包装说明: | E-LALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.77 | 应用: | SWITCHING |
外壳连接: | ISOLATED | 配置: | SINGLE |
最大二极管电容: | 1.8 pF | 二极管元件材料: | SILICON |
最大二极管正向电阻: | 0.8 Ω | 二极管类型: | PIN DIODE |
JESD-30 代码: | E-LALF-W2 | 少数载流子标称寿命: | 1.5 µs |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ELLIPTICAL |
封装形式: | LONG FORM | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 表面贴装: | NO |
技术: | POSITIVE-INTRINSIC-NEGATIVE | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UMX9989AP | MICROSEMI |
获取价格 |
DUAL ULTRA LOW MAGNETIC MOMENT FAST DIODES FOR MRI APPLICATIONS | |
UMX9989AP_09 | MICROSEMI |
获取价格 |
DUAL ULTRA LOW MAGNETIC MOMENT FAST DIODES FOR MRI APPLICATIONS | |
UMY1N | UTC |
获取价格 |
DUAL TRANSISTOR | |
UMY1N | ROHM |
获取价格 |
Emitter common (dual transistors) | |
UMY1N | CJ |
获取价格 |
SOT-353 | |
UMY1N | BL Galaxy Electrical |
获取价格 |
50V,0.15A,General Purpose PNP Bipolar Transistor 50V,0.15A,General Purpose NPN Bipolar Tra | |
UMY1N_15 | UTC |
获取价格 |
DUAL TRANSISTOR | |
UMY1NG-AL5-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
UMY1NL-AL5-R | UTC |
获取价格 |
DUAL TRANSISTOR | |
UMY1NTL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, |