UGB8AT-DT

更新时间： 2024-11-20 13:15:11

品牌	Logo	应用领域
威世 - VISHAY		二极管功效 IOT
页数	文件大小	规格书
2页	43K
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中文翻译

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UGB8AT-DT 数据手册

NEW PRODUCT

UGB8AT THRU UGB8DT

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts

Forward Current - 8.0 Amperes

TO-263AB

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Ideally suited for use in very high frequency

switching power supplies, inverters and as a free

wheeling diode

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.245 (6.22)

MIN

♦ Ultrafast reverse

0.047 (1.19)

recovery time for high efficiency

♦ Soft recovery characteristics

0.320 (8.13)

0.360 (9.14)

0.055 (1.40)

0.575 (14.60)

0.625 (15.88)

♦ Excellent high temperature switching

♦ Glass passivated chip junction

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

SEATING

PLATE

0.090 (2.29)

-T-

0.110 (2.79)

0.018 (0.46)

0.025 (0.64)

0.095 (2.41)

0.100 (2.54)

0.080 (2.03)

0.110 (2.79)

0.027 (0.686)

0.037 (0.940)

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

PIN 1

PIN 2

K - HEATSINK

Polarity: As marked

Mounting Position: Any

Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

UGB8AT

UGB8BT

100

UGB8CT

150

UGB8DT

200

UNITS

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

100

150

200

Maximum average forward rectified current

at T_C=100°C

I_(AV)

8.0

Amps

Peak forward surge current

8.3 ms single half sine-wave superimposed

on rated load (JEDEC Method) at T_C=100°C

I_FSM

150.0

Amps

Maximum instantaneous forward voltage at: 8.0

20A

1.00

1.20

0.95

V_F

Volts

5.0A, T_J=150°C

Maximum DC reverse current

at rated DC blocking voltage

T_C=25°C

T_C=100°C

10.0

300.0

I_R

t_rr

µA

Maximum reverse recovery time _{(NOTE 1)}

20.0

Maximum reverse recovery time

(NOTE 2)

T_J=25°C

T_J=100°C

30.0

50.0

Maximum recovered stored charge

(NOTE 2)

T_J=25°C

T_J=100°C

20.0

45.0

Q_rr

Typical junction capacitance _{(NOTE 3)}

Typical thermal resistance _{(NOTE 4)}

C_J

45.0

4.0

°C/W

°C

R_ΘJC

Operating junction and storage temperature range

T_J, T_STG

-55 to+150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) T_rrand Q_rrmeasured at I_F=8.0A, V_R=30V, di/dt=50A/µs, I_rr=10% I_RMfor meaurement of t_rr

(3) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(4) Thermal resistance from junction to case

10/27/98

中文翻译

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与UGB8AT-DT相关器件

型号	品牌	获取价格	描述	数据表
UGB8AT-E3/45	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
UGB8AT-HE3/81	VISHAY	获取价格	DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Re
UGB8ATHE3_A/P	VISHAY	获取价格	Rectifier Diode,
UGB8BT	VISHAY	获取价格	Ultrafast Rectifier
UGB8BT/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8BT/81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8BT-DT	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 100V V(RRM)
UGB8BT-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
UGB8BT-E3/45	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8BT-E3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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