UGB8BT-DT

更新时间： 2024-11-05 13:15:07

品牌	Logo	应用领域
威世 - VISHAY		二极管功效 IOT
页数	文件大小	规格书
2页	43K
描述
Rectifier Diode, 1 Element, 8A, 100V V(RRM)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UGB8BT-DT 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.75	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.95 V
最大非重复峰值正向电流：	150 A	元件数量：	1
最高工作温度：	150 °C	最大输出电流：	8 A
最大重复峰值反向电压：	100 V	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

UGB8BT-DT 数据手册

NEW PRODUCT

UGB8AT THRU UGB8DT

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 50 to 200 Volts

Forward Current - 8.0 Amperes

TO-263AB

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Ideally suited for use in very high frequency

switching power supplies, inverters and as a free

wheeling diode

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.245 (6.22)

MIN

♦ Ultrafast reverse

0.047 (1.19)

recovery time for high efficiency

♦ Soft recovery characteristics

0.320 (8.13)

0.360 (9.14)

0.055 (1.40)

0.575 (14.60)

0.625 (15.88)

♦ Excellent high temperature switching

♦ Glass passivated chip junction

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

SEATING

PLATE

0.090 (2.29)

-T-

0.110 (2.79)

0.018 (0.46)

0.025 (0.64)

0.095 (2.41)

0.100 (2.54)

0.080 (2.03)

0.110 (2.79)

0.027 (0.686)

0.037 (0.940)

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

PIN 1

PIN 2

K - HEATSINK

Polarity: As marked

Mounting Position: Any

Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

UGB8AT

UGB8BT

100

UGB8CT

150

UGB8DT

200

UNITS

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

105

140

Maximum DC blocking voltage

100

150

200

Maximum average forward rectified current

at T_C=100°C

I_(AV)

8.0

Amps

Peak forward surge current

8.3 ms single half sine-wave superimposed

on rated load (JEDEC Method) at T_C=100°C

I_FSM

150.0

Amps

Maximum instantaneous forward voltage at: 8.0

20A

1.00

1.20

0.95

V_F

Volts

5.0A, T_J=150°C

Maximum DC reverse current

at rated DC blocking voltage

T_C=25°C

T_C=100°C

10.0

300.0

I_R

t_rr

µA

Maximum reverse recovery time _{(NOTE 1)}

20.0

Maximum reverse recovery time

(NOTE 2)

T_J=25°C

T_J=100°C

30.0

50.0

Maximum recovered stored charge

(NOTE 2)

T_J=25°C

T_J=100°C

20.0

45.0

Q_rr

Typical junction capacitance _{(NOTE 3)}

Typical thermal resistance _{(NOTE 4)}

C_J

45.0

4.0

°C/W

°C

R_ΘJC

Operating junction and storage temperature range

T_J, T_STG

-55 to+150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) T_rrand Q_rrmeasured at I_F=8.0A, V_R=30V, di/dt=50A/µs, I_rr=10% I_RMfor meaurement of t_rr

(3) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(4) Thermal resistance from junction to case

10/27/98

中文翻译

下载PDF

与UGB8BT-DT相关器件

型号	品牌	获取价格	描述	数据表
UGB8BT-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
UGB8BT-E3/45	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8BT-E3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8BTHE3/45	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8BT-HE3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8CT	VISHAY	获取价格	ULTRAFAST EFFICIENT PLASTIC RECTIFIER
UGB8CT/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8CT-DT	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 150V V(RRM)
UGB8CT-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
UGB8CT-E3/45	VISHAY	获取价格	DIODE 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

与UGB8BT-DT相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

UGB8BT-DT

UGB8BT-DT 技术参数

UGB8BT-DT 数据手册

与UGB8BT-DT相关器件

与UGB8BT-DT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UGB8BT-DT

UGB8BT-DT 技术参数

UGB8BT-DT 数据手册

与UGB8BT-DT相关器件

与UGB8BT-DT相关文章

您还可以找

您在本页遇到什么问题？