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UGB8AT-HE3/81 PDF预览

UGB8AT-HE3/81

更新时间: 2024-11-24 14:28:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 129K
描述
DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

UGB8AT-HE3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

UGB8AT-HE3/81 数据手册

 浏览型号UGB8AT-HE3/81的Datasheet PDF文件第2页浏览型号UGB8AT-HE3/81的Datasheet PDF文件第3页浏览型号UGB8AT-HE3/81的Datasheet PDF文件第4页浏览型号UGB8AT-HE3/81的Datasheet PDF文件第5页 
UG(F,B)8AT thru UG(F,B)8DT  
Vishay General Semiconductor  
Ultrafast Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• High forward surge capability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
1
UG8xT  
PIN 1  
UGF8xT  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
UGB8xT  
PIN 1  
K
HEATSINK  
PIN 2  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
8.0 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
50 V to 200 V  
150 A  
20 ns  
VF  
0.95 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
UG8AT  
50  
UG8BT  
100  
UG8CT  
150  
UG8DT  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
A
35  
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 100 °C  
50  
100  
150  
200  
IF(AV)  
8.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
150  
A
°C  
V
Operating junction and storage temperature range  
- 55 to + 150  
1500  
Isolation voltage (ITO-220AC only)  
from terminals to heatsink t = 1 min  
Document Number: 88765  
Revision: 09-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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