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UG2001-T PDF预览

UG2001-T

更新时间: 2024-11-07 19:09:51
品牌 Logo 应用领域
美台 - DIODES 功效二极管
页数 文件大小 规格书
4页 121K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2

UG2001-T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-15包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.23其他特性:LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Bright Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

UG2001-T 数据手册

 浏览型号UG2001-T的Datasheet PDF文件第2页浏览型号UG2001-T的Datasheet PDF文件第3页浏览型号UG2001-T的Datasheet PDF文件第4页 
NOT RECOMMENDED  
FOR NEW DESIGN  
UG2001 - UG2007  
2.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER  
Features  
Mechanical Data  
Glass Passivated Die Construction  
Ultra-Fast Switching for High Efficiency  
Surge Overload Rating to 60A Peak  
Low Reverse Leakage Current  
Case: DO-15  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish - Tin. Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Ordering Information: See Page 3  
Weight: 0.4 grams (approximate)  
Lead Free Finish, RoHS Compliant (Note 4)  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol UG2001 UG2002 UG2003 UG2004 UG2005 UG2006 UG2007 Unit  
VRRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage (Note 5)  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VRWM  
VR  
RMS Reverse Voltage  
280  
2.0  
V
A
VR(RMS)  
IO  
Average Rectified Output Current @TA = 55°C (Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave Superimposed on Rated Load  
60  
A
IFSM  
Thermal Characteristics  
Characteristic  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
Symbol  
Value  
50  
-55 to +150  
Unit  
°C/W  
Rθ  
JA  
TJ, TSTG  
°C  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol UG2001 UG2002 UG2003 UG2004 UG2005 UG2006 UG2007 Unit  
1.0  
1.3  
1.7  
V
Forward Voltage  
@ IF = 2.0A  
@ TA 25°C  
@ TA = 100°C  
VF  
Peak Reverse Current  
=
5.0  
100  
IR  
μA  
at Rated DC Blocking Voltage (Note 5)  
Typical Total Capacitance (Note 2)  
Reverse Recovery Time (Note 3)  
30  
50  
15  
75  
pF  
ns  
CT  
trr  
Notes:  
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.  
5. Short duration pulse test used to minimize self-heating effect.  
1 of 4  
www.diodes.com  
October 2010  
© Diodes Incorporated  
UG2001 - UG2007  
Document number: DS27009 Rev. 5 - 3  

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