Datasheet > UD4606ZG-S08-R

UD4606ZG-S08-R

更新时间： 2024-02-11 04:52:20

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	163K
描述
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

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UD4606ZG-S08-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UD4606Z

Preliminary

Power MOSFET

DUAL ENHANCEMENT MODE

(N-CHANNEL/P-CHANNEL)

DESCRIPTION

The UTC UD4606Z is a dual enhancement mode Power

MOSFET using UTC perfect trench technology to provide customers

with advanced R_DS(ON)and low gate charge. This device has ESD

protection function.

These complementary MOSFETs can be used to form a level

shifted high side switch and for other applications.

FEATURES

* N-Channel: 30V/6.9A

_DS(ON)=22.5mΩ (TYP.) (V_GS=10V)

_DS(ON)=34.5mΩ ((TYP.) (V_GS=4.5V)

*P-Channel: -30V/-6A

_DS(ON)=28mΩ(TYP.) (V_GS=-10V )

_DS(ON)=44mΩ(TYP.) (V_GS=-4.5V)

* Reliable and rugged

* ESD protection

SYMBOL

(5)(6)

(7)(8)

(4)

(2)

(3)

(1)

N-Channel

P-Channel

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOP-8

Packing

Lead Free Plating

UD4606ZL-S08-R

Halogen Free

UD4606ZG-S08-R

S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel

www.unisonic.com.tw

1 of 6

QW-R502-763.a

12 3 4 5 6

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