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UCC27423DR PDF预览

UCC27423DR

更新时间： 2024-01-03 21:16:01
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管信息通信管理PC
页数 文件大小 规格书
30页 1460K
描述
Dual 4-A High Speed Low-Side MOSFET Drivers With Enable

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UCC27423DR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIP
包装说明：DIP, DIP8,.3针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：1Samacsys Description：UCC27423P, Dual MOSFET Power Driver 4A, Inverting, 4 → 15 V, 8-Pin PDIP
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDIP-T8JESD-609代码：e4
长度：9.81 mm功能数量：2
端子数量：8最高工作温度：105 °C
最低工作温度：-40 °C输出特性：TOTEM-POLE
最大输出电流：4 A标称输出峰值电流：4 A
输出极性：INVERTED封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：4.5/15 V
认证状态：Not Qualified座面最大高度：5.08 mm
子类别：MOSFET Drivers最大压摆率：1.35 mA
最大供电电压：15 V最小供电电压：4.5 V
标称供电电压：14 V表面贴装：NO
技术：BICMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.05 µs
接通时间：0.04 µs宽度：7.62 mm

UCC27423DR 数据手册

 浏览型号UCC27423DR的Datasheet PDF文件第2页浏览型号UCC27423DR的Datasheet PDF文件第3页浏览型号UCC27423DR的Datasheet PDF文件第4页浏览型号UCC27423DR的Datasheet PDF文件第6页浏览型号UCC27423DR的Datasheet PDF文件第7页浏览型号UCC27423DR的Datasheet PDF文件第8页 
UCC27423, UCC27424, UCC27425  
www.ti.com  
SLUS545D –NOVEMBER 2002–REVISED MAY 2013  
5V  
ENBx  
0V  
V
V
IN_L  
IN_H  
t
t
D3  
D4  
V
DD  
90%  
90%  
t
F
t
R
OUTx  
10%  
0V  
NOTE: The 10% and 90% thresholds depict the dynamics of the BiPolar output devices that dominate the power MOSFET  
transition through the Miller regions of operation.  
Figure 2. Switching Waveform for Enable to Output  
Terminal Functions  
TERMINAL  
I/O  
FUNCTION  
NO.  
NAME  
1
ENBA  
I
Enable input for the driver A with logic compatible threshold and hysteresis. The driver output can be enabled and disabled with  
this pin. It is internally pulled up to VDD with 100kΩ resistor for active high operation. The output state when the device is  
disabled will be low regardless of the input state.  
2
INA  
I
I
Input A. Input signal of the A driver which has logic compatible threshold and hysteresis. If not used, this input should be tied to  
either VDD or GND. It should not be left floating.(1)  
3
4
GND  
INB  
Common ground. This ground should be connected very closely to the source of the power MOSFET which the driver is driving.  
Input B. Input signal of the A driver which has logic compatible threshold and hysteresis. If not used, this input should be tied to  
either VDD or GND. It should not be left floating.  
5
6
7
8
OUTB  
VDD  
O
I
Driver output B. The output stage is capable of providing 4A drive current to the gate of a power MOSFET.  
Supply. Supply voltage and the power input connection for this device.  
OUTA  
ENBB  
O
I
Driver output A. The output stage is capable of providing 4A drive current to the gate of a power MOSFET.  
Enable input for the driver B with logic compatible threshold and hysteresis. The driver output can be enabled and disabled with  
this pin. It is internally pulled up to VDD with 100kΩ resistor for active high operation. The output state when the device is  
disabled will be low regardless of the input state.(1)  
(1) Refer to APPLICATION INFORMATION Section for more details.  
Copyright © 2002–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: UCC27423 UCC27424 UCC27425  
 
 
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UCC27423DR 替代型号

型号 品牌 替代类型 描述 数据表
UCC27424DR TI

完全替代

 Dual 4-A High Speed Low-Side MOSFET Drivers With Enable
UCC27324DR TI

类似代替

 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
UCC27324D TI

类似代替

 DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS

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