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UCC27423DR PDF预览

UCC27423DR

更新时间： 2024-02-28 12:21:53
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管信息通信管理PC
页数 文件大小 规格书
30页 1460K
描述
Dual 4-A High Speed Low-Side MOSFET Drivers With Enable

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UCC27423DR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIP
包装说明：DIP, DIP8,.3针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：1Samacsys Description：UCC27423P, Dual MOSFET Power Driver 4A, Inverting, 4 → 15 V, 8-Pin PDIP
高边驱动器：NO接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDIP-T8JESD-609代码：e4
长度：9.81 mm功能数量：2
端子数量：8最高工作温度：105 °C
最低工作温度：-40 °C输出特性：TOTEM-POLE
最大输出电流：4 A标称输出峰值电流：4 A
输出极性：INVERTED封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：4.5/15 V
认证状态：Not Qualified座面最大高度：5.08 mm
子类别：MOSFET Drivers最大压摆率：1.35 mA
最大供电电压：15 V最小供电电压：4.5 V
标称供电电压：14 V表面贴装：NO
技术：BICMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：0.05 µs
接通时间：0.04 µs宽度：7.62 mm

UCC27423DR 数据手册

 浏览型号UCC27423DR的Datasheet PDF文件第4页浏览型号UCC27423DR的Datasheet PDF文件第5页浏览型号UCC27423DR的Datasheet PDF文件第6页浏览型号UCC27423DR的Datasheet PDF文件第8页浏览型号UCC27423DR的Datasheet PDF文件第9页浏览型号UCC27423DR的Datasheet PDF文件第10页 
UCC27423, UCC27424, UCC27425  
www.ti.com  
SLUS545D –NOVEMBER 2002–REVISED MAY 2013  
Two circuits are used to test the current capabilities of the UCC27423 driver. In each case external circuitry is  
added to clamp the output near 5 V while the IC is sinking or sourcing current. An input pulse of 250 ns is  
applied at a frequency of 1 kHz in the proper polarity for the respective test. In each test there is a transient  
period where the current peaked up and then settled down to a steady-state value. The noted current  
measurements are made at a time of 200 ns after the input pulse is applied, after the initial transient.  
The first circuit in Figure 2 is used to verify the current sink capability when the output of the driver is clamped  
around 5V, a typical value of gate-source voltage during the Miller plateau region. The UCC27423 is found to  
sink 4.5A at VDD = 15V and 4.28A at VDD = 12V.  
The circuit shown in Figure 3 is used to test the current source capability with the output clamped to around 5 V  
with a string of Zener diodes. The UCC27423 is found to source 4.8 A at VDD = 15 V and 3.7 A at VDD = 12 V.  
VDD  
UCC27423  
ENBA  
1
2
3
4
ENBB  
8
7
6
5
INPUT  
D
SCHOTTKY  
Ω
10  
INA  
OUTA  
V
SUPPLY  
5.5 V  
C2  
+
µ
1
F
F
GND  
INB  
VDD  
OUTB  
V
SNS  
µ
100  
F
R
0.1  
µ
CER  
SNS  
1
F
AL EL  
Ω
UDG-01065  
Figure 3.  
It should be noted that the current sink capability is slightly stronger than the current source capability at lower  
VDD. This is due to the differences in the structure of the bipolar-MOSFET power output section, where the  
current source is a P-channel MOSFET and the current sink has an N-channel MOSFET.  
In a large majority of applications it is advantageous that the turn-off capability of a driver is stronger than the  
turn-on capability. This helps to ensure that the MOSFET is held OFF during common power supply transients  
which may turn the device back ON.  
Parallel Outputs  
The A and B drivers may be combined into a single driver by connecting the INA/INB inputs together and the  
OUTA/OUTB outputs together. Then, a single signal can control the paralleled combination as shown in Figure 4.  
Copyright © 2002–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Links: UCC27423 UCC27424 UCC27425  
 
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