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UCC21759QDWQ1

更新时间： 2024-09-19 11:15:07
品牌 Logo 应用领域
德州仪器 - TI 栅极驱动双极性晶体管驱动器
页数 文件大小 规格书
57页 2481K
描述
适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150

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UCC21759QDWQ1 数据手册

 浏览型号UCC21759QDWQ1的Datasheet PDF文件第2页浏览型号UCC21759QDWQ1的Datasheet PDF文件第3页浏览型号UCC21759QDWQ1的Datasheet PDF文件第4页浏览型号UCC21759QDWQ1的Datasheet PDF文件第5页浏览型号UCC21759QDWQ1的Datasheet PDF文件第6页浏览型号UCC21759QDWQ1的Datasheet PDF文件第7页 
UCC21759-Q1
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
UCC21759-Q1 10-A Source/Sink Basic Isolated Single Channel Gate Driver  
for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI  
1 Features  
3 Description  
•
•
•
•
•
•
•
•
•
•
•
3-kVRMS single channel isolated gate driver  
AEC-Q100 qualified for automotive applications  
Drives SiC MOSFETs and IGBTs up to 990Vpk  
33-V maximum output drive voltage (VDD-VEE)  
High peak drive current and high CMTI  
±10-A drive strength and split output  
150-V/ns minimum CMTI  
200-ns response time fast DESAT protection  
4-A internal active Miller clamp  
400-mA soft turn-off under fault conditions  
Isolated analog sensor with PWM output for  
– Temperature sensing with NTC, PTC or thermal  
diode  
– High voltage DC-Link or phase voltage  
Alarm FLT on over current and reset from RST/EN  
Fast enable/disable response on RST/EN  
Rejects <40-ns noise transients and pulses on  
input pins  
12-V VDD UVLO with power good on RDY  
Inputs/outputs with over/under-shoot transient  
voltage immunity up to 5 V  
130-ns (maximum) propagation delay and 30-ns  
(maximum) pulse/part skew  
SOIC-16 DW package with creepage and  
clearance distance > 8mm  
The UCC21759-Q1 is a galvanic isolated single  
channel gate driver designed for SiC MOSFETs and  
IGBTs up to 990-V DC operating voltage with  
advanced protection features, best-in-class dynamic  
performance and robustness. UCC21759-Q1 has up  
to ±10-A peak source and sink current.  
The input side is isolated from the output side with  
SiO2 capacitive isolation technology, supporting up to  
700-VRMS working voltage with longer than 40 years  
isolation barrier life, 6-kVPK surge immunity, as well as  
providing low part-to-part skew, and >150-V/ns  
common mode noise immunity (CMTI).  
The UCC21759-Q1 includes the state-of-art protection  
features, such as fast short circuit detection, fault  
reporting, active Miller clamp, and input and output  
side power supply UVLO optimized for SiC and IGBT  
power transistors. The isolated analog to PWM sensor  
can be utilized for easier temperature or voltage  
sensing, further increasing the drivers' versatility and  
simplifying the system design effort, size, and cost.  
•
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Device Information  
PART  
PACKAGE  
BODY SIZE (NOM)  
NUMBER(1)  
•
•
UCC21759-Q1  
DW SOIC-16  
10.3 mm × 7.5 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
•
•
Operating junction temperature –40°C to +150°C  
Safety-related certifications (Planned):  
– 6000-VPK basic isolation per DIN V VDE  
V0884-11: 2017-01  
Device Pin Configuration  
– 3-kVRMS isolation for 1 minute per UL 1577  
APWM  
AIN  
DESAT  
COM  
1
2
3
4
5
6
7
8
16  
15  
VCC  
RST/EN  
FLT  
2 Applications  
14  
13  
12  
11  
10  
9
•
•
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Traction inverter for EVs  
On-board charger and charging pile  
DC/DC converter for HEV/EVs  
OUTH  
VDD  
RDY  
INÅ  
OUTL  
CLMPI  
VEE  
IN+  
GND  
Not to scale  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
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