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UC1725DW PDF预览

UC1725DW

更新时间: 2024-11-18 21:17:51
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
5页 291K
描述
2A BUF OR INV BASED MOSFET DRIVER, PDSO16, 0.300 INCH, PLASTIC, SOIC-16

UC1725DW 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.300 INCH, PLASTIC, SOIC-16针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G16长度:10.365 mm
功能数量:1端子数量:16
最高工作温度:125 °C最低工作温度:-55 °C
标称输出峰值电流:2 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
座面最大高度:2.64 mm最大供电电压:15 V
最小供电电压:标称供电电压:8 V
表面贴装:YES温度等级:MILITARY
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL断开时间:0.3 µs
接通时间:0.3 µs宽度:7.5 mm
Base Number Matches:1

UC1725DW 数据手册

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UC1725  
UC2725  
UC3725  
Isolated High Side FET Driver  
FEATURES  
DESCRIPTION  
Receives Both Power and Signal Across The UC1725 and its companion chip, the UC1724, provide all the nec-  
the Isolation Boundary  
essary features to drive an isolated MOSFET transistor from a TTL in-  
put signal. A unique modulation scheme is used to transmit both power  
and signals across an isolation boundary with a minimum of external  
components.  
9 to 15 Volt High Level Gate Drive  
Under-voltage Lockout  
Protection circuitry, including under-voltage lockout, over-current shut-  
down, and gate voltage clamping provide fault protection for the MOS-  
FET. High level gate drive is guaranteed to be greater than 9 volts and  
less than 15 volts under all conditions.  
Programmable Over-current Shutdown  
and Restart  
Output Enable Function  
Uses include isolated off-line full bridge and half bridge drives for driv-  
ing motors, switches, and any other load requiring full electrical isola-  
tion.  
The UC1725 is characterized for operation over the full military tem-  
perature range of -55°C to +125°C while the UC2725 and UC3725 are  
characterized for -25°C to +85°C and 0°C to +70°C respectively.  
BLOCK DIAGRAM  
UDG-92051-1  
1/94  

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