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UC1725Q PDF预览

UC1725Q

更新时间: 2024-09-26 21:17:51
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德州仪器 - TI /
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5页 291K
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UC1725Q 数据手册

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UC1725  
UC2725  
UC3725  
Isolated High Side FET Driver  
FEATURES  
DESCRIPTION  
Receives Both Power and Signal Across The UC1725 and its companion chip, the UC1724, provide all the nec-  
the Isolation Boundary  
essary features to drive an isolated MOSFET transistor from a TTL in-  
put signal. A unique modulation scheme is used to transmit both power  
and signals across an isolation boundary with a minimum of external  
components.  
9 to 15 Volt High Level Gate Drive  
Under-voltage Lockout  
Protection circuitry, including under-voltage lockout, over-current shut-  
down, and gate voltage clamping provide fault protection for the MOS-  
FET. High level gate drive is guaranteed to be greater than 9 volts and  
less than 15 volts under all conditions.  
Programmable Over-current Shutdown  
and Restart  
Output Enable Function  
Uses include isolated off-line full bridge and half bridge drives for driv-  
ing motors, switches, and any other load requiring full electrical isola-  
tion.  
The UC1725 is characterized for operation over the full military tem-  
perature range of -55°C to +125°C while the UC2725 and UC3725 are  
characterized for -25°C to +85°C and 0°C to +70°C respectively.  
BLOCK DIAGRAM  
UDG-92051-1  
1/94  

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