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U62256AS2C10LL PDF预览

U62256AS2C10LL

更新时间: 2024-11-06 05:54:55
品牌 Logo 应用领域
ZMD 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 164K
描述
STANDARD 32K X 8 SRAM

U62256AS2C10LL 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP28,.5
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.19最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:18.1 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.5
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
座面最大高度:2.54 mm最大待机电流:0.000003 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.065 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8.75 mmBase Number Matches:1

U62256AS2C10LL 数据手册

 浏览型号U62256AS2C10LL的Datasheet PDF文件第2页浏览型号U62256AS2C10LL的Datasheet PDF文件第3页浏览型号U62256AS2C10LL的Datasheet PDF文件第4页浏览型号U62256AS2C10LL的Datasheet PDF文件第5页浏览型号U62256AS2C10LL的Datasheet PDF文件第6页浏览型号U62256AS2C10LL的Datasheet PDF文件第7页 
U62256A  
Standard 32K x 8 SRAM  
Description  
Features  
falling edge of W, or by the rising  
edge of E, respectively.  
! 32768x8 bit static CMOS RAM  
! Access times 70 ns, 100 ns  
! Common data inputs and  
data outputs  
The U62256A is a static RAM  
manufactured using a CMOS pro-  
cess technology with the following  
operating modes:  
Data retention is guaranteed down  
to 2 V. With the exception of E, all  
inputs consist of NOR gates, so  
that no pull-up/pull-down resistors  
are required.  
! Three-state outputs  
- Read  
- Write  
- Standby  
! Typ. operating supply current  
70 ns: 50 mA  
- Data Retention  
The memory array is based on a  
6-transistor cell.  
100 ns: 40 mA  
! TTL/CMOS-compatible  
! Automatical reduction of power  
dissipation in long Read Cycles  
The circuit is activated by the fal-  
ling edge of E. The address and  
control inputs open simultaneously.  
According to the information of W  
and G, the data inputs, or outputs,  
are active. In a Read cycle, the  
data outputs are activated by the  
falling edge of G, afterwards the  
data word read will be available at  
the outputs DQ0-DQ7. After the  
address change, the data outputs  
go High-Z until the new information  
read is available. The data outputs  
have not preferred state.  
+
! Power supply voltage 5 V 10 %  
! Operating temperature ranges  
0 to 70 °C  
-40 to 85 °C  
-40 to 125 °C  
! QS 9000 Quality Standard  
! ESD protection > 2000 V  
(MIL STD 883C M3015.7)  
! Latch-up immunity >100 mA  
! Packages: PDIP28 (600 mil)  
SOP28 (330 mil)  
The Read cycle is finished by the  
Pin Configuration  
Pin Description  
1
2
3
4
5
6
7
8
VCC  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
W
A13  
A8  
A9  
A11  
Signal Name Signal Description  
A0 - A14  
DQ0 - DQ7  
Address Inputs  
Data In/Out  
G
A10  
Chip Enable  
PDIP  
SOP  
E
Output Enable  
Write Enable  
Power Supply Voltage  
Ground  
G
W
VCC  
VSS  
9
E
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
A0  
DQ0  
DQ1  
DQ2  
VSS  
Top View  
April 20, 2004  
1

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