Datasheet > U1BC44(TE12R,Q)

U1BC44(TE12R,Q)

更新时间： 2024-01-12 22:30:17

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	222K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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U1BC44(TE12R,Q) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.73	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

U1BC44(TE12R,Q) 数据手册

U1BC44,U1GC44,U1JC44

TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE

U1BC44, U1GC44, U1JC44

Unit: mm

FOR HYBRID USE

z Average Forward Current

z Repetitive Peak Reverse Voltage

z Mini Plastic Mold Package

: I

= 1.0 A

F (AV)

: V

= 100 V, 400 V, 600 V

RRM

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

UNIT

U1BC44

U1GC44

U1JC44

100

400

600

Repetitive Peak

Reverse Voltage

RRM

1.0

(Ta = 75°C)

On Ceramic Substrate

Average

Forward

Current

F (AV)

On Glass−epoxy

Substrate

0.9

(Ta = 25°C)

30 (50Hz)

33 (60Hz)

−40~150

Peak One Cycle Surge Forward

Current (Non−Repetitive)

FSM

JEDEC

―

JEITA

Junction Temperature

°C

TOSHIBA

Weight: 0.06g

3−4D1A

Storage Temperature Range

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Peak Forward Voltage

SYMBOL

TEST CONDITION

= 1.0A

MIN

―

TYP.

―

MAX

1.2

UNIT

Repetitive Peak Reverse

Current

= Rated

RRM

―

μA

RRM

On ceramic substrate

―

Thermal Resistance

th (j−a)

°C / W

On glass-epoxy substrate

120

MARKING

Abbreviation Code

Part No.

U1BC44

U1GC44

U1JC44

2006-11-06

12 3 4

中文翻译

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