Datasheet > TZX9V1E-TAP

TZX9V1E-TAP

更新时间： 2024-09-14 18:13:51

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
8页	94K
描述
Zener Diode, 9.5V V(Z), 2.1%, 0.5W,

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中文翻译

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TZX9V1E-TAP 数据手册

TZX...

Vishay Semiconductors

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

Applications

94 9367

Voltage stabilization

Order Instruction

Type

TZX2V4A

Ordering Code

TZX2V4A–TAP

Remarks

Ammopack

Absolute Maximum Ratings

T = 25_C

Parameter

Test Conditions

Type

Symbol

Value

500

Unit

°C

Power dissipation

Z–current

l=4 mm, T =25 °C

P /V

Junction temperature

Storage temperature range

175

stg

–65...+175

°C

Maximum Thermal Resistance

T = 25_C

Parameter

Test Conditions

Symbol

Value

300

Unit

K/W

Junction ambient

l=4 mm, T =constant

thJA

Electrical Characteristics

T = 25_C

Parameter

Test Conditions

I =200mA

Type

Symbol Min Typ Max Unit

1.5

Forward voltage

Document Number 85614

Rev. A6, 08-Aug-02

www.vishay.com

1 (8)

12 3 4 5 6 7 8

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