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TZX3V0B PDF预览

TZX3V0B

更新时间: 2024-10-31 05:54:23
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
7页 98K
描述
Silicon Epitaxial Planar Z-Diodes

TZX3V0B 数据手册

 浏览型号TZX3V0B的Datasheet PDF文件第2页浏览型号TZX3V0B的Datasheet PDF文件第3页浏览型号TZX3V0B的Datasheet PDF文件第4页浏览型号TZX3V0B的Datasheet PDF文件第5页浏览型号TZX3V0B的Datasheet PDF文件第6页浏览型号TZX3V0B的Datasheet PDF文件第7页 
TZX...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85614  
Rev. 2, 01-Apr-99  
1 (7)  

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