Datasheet > TZX3V0-C

TZX3V0-C

更新时间： 2024-11-20 14:36:31

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中文翻译

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数据手册

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TZX3V0-C 数据手册

TZX...

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

l=4mm,

Type

Symbol

Value

500

Unit

Power dissipation

T =25 C

Z–current

P /V

Junction temperature

Storage temperature range

175

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

l=4mm, T =constant

Symbol

Value

300

Unit

K/W

Junction ambient

thJA

Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol

Min

Typ

Max

1.5

Unit

TELEFUNKEN Semiconductors

1 (8)

Rev. A1, 10-Mar-97

12 3 4 5 6 7 8

中文翻译

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TZX3V0C-AP	MCC	获取价格	Zener Diode, 3.1V V(Z), 3.23%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS
TZX3V0C-BP	MCC	获取价格	Zener Diode, 3.1V V(Z), 3.23%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS
TZX3V0C-TAP	VISHAY	获取价格	Zener Diode, 3.1V V(Z), 3.2%, 0.5W,
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TZX3V0-TAP	VISHAY	获取价格	暂无描述
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TZX3V3	VISHAY	获取价格	Silicon Epitaxial Planar Z-Diodes
TZX3V3A	VISHAY	获取价格	Silicon Epitaxial Planar Z-Diodes
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