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TZX3V3A PDF预览

TZX3V3A

更新时间: 2024-11-20 12:16:55
品牌 Logo 应用领域
美台 - DIODES 稳压二极管齐纳二极管测试局域网
页数 文件大小 规格书
4页 70K
描述
500mW EPITAXIAL PLANAR ZENER DIODE

TZX3V3A 技术参数

生命周期:Obsolete零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.72
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.3 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
最大电压容差:3.13%工作测试电流:5 mA
Base Number Matches:1

TZX3V3A 数据手册

 浏览型号TZX3V3A的Datasheet PDF文件第2页浏览型号TZX3V3A的Datasheet PDF文件第3页浏览型号TZX3V3A的Datasheet PDF文件第4页 
TZX2V4 - TZX36C  
500mW EPITAXIAL PLANAR ZENER DIODE  
Features  
·
·
·
Planar Die Construction  
500mW Power Dissipation on FR-4 PCB  
General Purpose, Medium Current  
A
B
A
C
Mechanical Data  
D
·
Case: DO-35, Glass  
DO-35  
Min  
25.40  
¾
·
Leads: Solderable per MIL-STD-202,  
Dim  
A
Max  
Method 208  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
¾
B
4.00  
0.60  
2.00  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
¾
Value  
¾
Unit  
¾
Zener Current (See Table on page 2)  
Forward Voltage  
@ IF = 200mA  
VF  
1.5  
V
Pd  
Power Dissipation (Note 1)  
500  
mW  
K/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
300  
-65 to +175  
Notes:  
1. Valid provided that leads are kept at ambient temperature.  
2. Tested with pulses, t £ 1.0ms.  
DS30089 Rev. 1P-5  
1 of 4  
TZX2V4 - TZX36C  

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TZX3V3-B TEMIC

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TZX3V3B-BP MCC

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TZX3V3B-TAP VISHAY

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Zener Diode, 3.3V V(Z), 3%, 0.5W,