TZX11A-TAP

更新时间： 2024-11-05 13:15:07

品牌	Logo	应用领域
威世 - VISHAY		二极管测试
页数	文件大小	规格书
7页	98K
描述
Zener Diode, 10.6V V(Z), 1.9%, 0.5W,

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中文翻译

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数据手册

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TZX11A-TAP 数据手册

TZX...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

l=4mm, T =25 C

Type

Symbol

Value

500

Unit

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

300

Unit

K/W

l=4mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

www.vishay.de • FaxBack +1-408-970-5600

Document Number 85614

Rev. 2, 01-Apr-99

1 (7)

12 3 4 5 6 7

中文翻译

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与TZX11A-TAP相关器件

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TZX11B	DIODES	获取价格	500mW EPITAXIAL PLANAR ZENER DIODE
TZX11B	VISHAY	获取价格	Small Signal Zener Diodes
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TZX11B-TAP	VISHAY	获取价格	Zener Diode, 10.9V V(Z), 1.8%, 0.5W,
TZX11B-TR	VISHAY	获取价格	DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode
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TZX11C	DIODES	获取价格	500mW EPITAXIAL PLANAR ZENER DIODE
TZX11-C	TEMIC	获取价格	Zener Diode, 11V V(Z), 1.8%, 0.5W, Silicon, Unidirectional, DO-35,